Nexperia and TU Hamburg have launched an endowed professorship in power-electronic devices to accelerate SiC, GaN, and AlScN semiconductor development and strengthen talent pipelines for energy-efficient innovations. This strategic partnership will drive next-gen device architectures and advanced fault-prediction systems as part of a broader push toward electrification.
#semiconductors #powerelectronics #SiC #GaN #research
- Nexperia and TU Hamburg have established a new endowed chair, held by Prof. Holger Kapels, to lead the Institute for Power Electronic Devices focused on wide-bandgap innovation.
- The initiative targets Wide-Bandgap (WBG) compound semiconductors such as SiC, GaN, and AlScN that enable higher switching speeds, reduced conduction losses, and more compact modules ideal for EVs, data centers, and industrial systems.
- These WBG semiconductors offer superior electrical properties compared to traditional silicon, including higher voltage tolerance, faster switching speeds, and lower energy losses. These advantages make WBG devices critical for next-generation power electronics used in electric vehicles, data centers, and industrial applications, driving efficiency and performance gains across the semiconductor industry.
- Research will explore advanced architectures like vertical GaN FETs and leverage machine-learning techniques for predictive fault detection in power devices.
- The endowed chair reflects Nexperia’s long-term strategy to build local innovation capacity, capitalizing on its century-old Hamburg wafer-fab legacy.
- Nexperia’s Hamburg facility currently accounts for about 25% of the world’s small-signal diode and transistor production, with headcount rising from 950 to approximately 1,600 post-modernization.
- Company leadership emphasized that combining research and talent development is essential for strengthening Germany’s deep-tech semiconductor ecosystem.
- Prof. Kapels will teach core courses like ‘Electrical Engineering I’ and ‘Wide Bandgap Semiconductors’ from the winter semester 2025/26 to train the next generation of engineers.
- This partnership is expected to accelerate semiconductor innovation, enhancing industry growth through cutting-edge device R&D and workforce development.
- Asia-Pacific employment benefits indirectly as expanded global demand for power-electronics bolsters manufacturing-linked job creation and R&D roles across regional facilities.
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