Darin Davis, CEO of SILICET LLC – a semiconductor IP licensing firm specializing in innovative LDMOS architectures. SILICET develops and licenses advanced LDMOS IP that enhances transistor performance, reliability, and cost-efficiency for BCD processes.

Davis’s groundbreaking source-side LDMOS design has redefined power transistor efficiency, delivering ~25% performance/cost improvements and reliability gains across global fabs. Excerpts from July 2025 interview with Daniel Nenni of SemiWiki.com.

https://www.linkedin.com/pulse/silicet-ceo-darin-davis-transforms-ldmos-design-redefines-olivas-jacpc/?trackingId=9I7areQ0R4Cs0nD%2Fyki1IQ%3D%3D

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  • Darin Davis, CEO of SILICET LLC confronted persistent parasitic bipolar snapback in LDMOS devices by engineering a hybrid source architecture. He implemented precise source-side optimization that slashed specific on-resistance and virtually eliminated parasitic NPN effects, boosting safety and device longevity.
  • Davis earned his degree in Electrical Engineering from Texas A&M University-Kingsville College of Engineering, where he developed a deep foundation in semiconductor physics and device architecture. This education became the cornerstone of his technical leadership, enabling him to innovate LDMOS designs beyond conventional constraints.
  • He addressed complex breakdown voltage challenges by introducing a retrograde body design that managed electric fields more effectively. This led to enhanced hot carrier injection reliability and greater breakdown thresholds across power applications.
  • To improve safe operating areas and transient protection, Davis pioneered mobility and carrier injection techniques within the source structure. This breakthrough enabled triple the unity gain and expanded device capabilities under high current stress.
  • Recognizing the demand for faster switching in CPU and GPU power supplies, he redesigned layouts to reduce gate capacitance without compromising drive strength. His innovations supported next-gen computing needs with best-in-class energy performance.
  • Davis tackled cost-performance trade-offs head-on by ensuring SILICET’s IP integrates into existing lithography and silicidation flows. This decision reduced barriers to adoption and extended the lifespan of legacy fab infrastructure.
  • In a fiercely competitive sector, he refused to pursue marginal improvements and instead pursued architectural reinvention. His commitment to leapfrogging performance norms led to smaller die areas and higher efficiency across BCD platforms.
  • By securing global patents and aligning with international foundries and IDMs, Davis made SILICET’s solutions scalable and production-ready. His global strategy positioned the company as a go-to partner for modern LDMOS deployment.
  • Davis’s career reflects relentless innovation, deep technical rigor, and bold leadership in transforming entrenched systems. He encourages engineers to question defaults, empowers professionals to take bold technical bets, and reminds leaders that real progress lies beyond comfort zones.
  • Excerpts from July 2025 interview with Daniel Nenni of SemiWiki.com.

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